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Diffusion in a single crystal within a stressed environment

Lookup NU author(s): Professor Nick Cowern

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Abstract

The energetics of point defects and diffusion in a single crystal is analyzed with respect to stress in overlying or encapsulating layers. The resulting theory subsumes previous formulations of pressure and stress effects on diffusion. A key prediction is that stress on the overlayer side of the crystal boundary perturbs point defect concentrations in the underlying crystal. The effect can occur without significant strain in the crystal itself. The theory is compared with available published data on diffusion in silicon under thin strained overlayers. © 2007 The American Physical Society.

Publication metadata

Author(s): Cowern NEB

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 2007

Volume: 99

Issue: 15

Pages: -

Print publication date: 12/10/2007

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.99.155903

DOI: 10.1103/PhysRevLett.99.155903

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