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Lookup NU author(s): Praneet Bhatnagar,
Professor Nick Wright,
Dr Alton Horsfall,
Dr Konstantin VasilevskiyORCiD,
Dr Christopher Johnson
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4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.
Author(s): Bhatnagar P, Wright NG, Horsfall AB, Vassilevski K, Johnson CM, Uren MJ, Hilton KP, Munday AG, Hydes AJ
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)
Year of Conference: 2007
Publisher: Materials Science Forum: Trans Tech Publications Ltd
Notes: Silicon Carbide and Related Materials 2006 Conference.
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