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Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

Lookup NU author(s): Professor Nick Cowern

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Abstract

The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of ∼600 sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively. © 2008 American Institute of Physics.

Publication metadata

Author(s): Sharp JA, Smith AJ, Webb RP, Kirkby KJ, Cowern NEB, Giubertoni D, Gennaro S, Bersani M, Foad MA, Fazzini PF, Cristiano F

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2008

Volume: 92

Issue: 8

Print publication date: 01/01/2008

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2885091

DOI: 10.1063/1.2885091

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