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Lookup NU author(s): Professor Anthony O'Neill, Dr Alton Horsfall
In this paper we investigate the reliability of Cu contacts with both Ta and W based barriers using thermal and electrical stressing. The Ta based barrier showed superior resistance to electrical stressing, with a time-to-failure approaching that of the W-plug reference and a via like failure mode. However early fails reduce the tso due to high process induced stress imposed by the pre-metal dielectric. These initial results suggest, with further process optimization to reduce thermal stress and improve barrier uniformity, Cu contacts with Ta based barriers can be as reliable as vias in higher metals layers and the traditional W contacts. © 2008 IEEE.
Author(s): Wang K, Wilson CJ, Cuthbertson A, Herberholz R, Coulson HP, O'Neill AG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: IEEE International Reliability Physics Symposium Proceedings
Year of Conference: 2008
Pages: 677-678
Date deposited: 16/03/2010
Publisher: IEEE
URL: http://dx.doi.org/10.1109/RELPHY.2008.4558984
DOI: 10.1109/RELPHY.2008.4558984
Library holdings: Search Newcastle University Library for this item
ISBN: 9781424420490
