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Influence of barriers on the reliability of dual damascene copper contacts

Lookup NU author(s): Professor Anthony O'Neill, Dr Alton Horsfall

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Abstract

In this paper we investigate the reliability of Cu contacts with both Ta and W based barriers using thermal and electrical stressing. The Ta based barrier showed superior resistance to electrical stressing, with a time-to-failure approaching that of the W-plug reference and a via like failure mode. However early fails reduce the tso due to high process induced stress imposed by the pre-metal dielectric. These initial results suggest, with further process optimization to reduce thermal stress and improve barrier uniformity, Cu contacts with Ta based barriers can be as reliable as vias in higher metals layers and the traditional W contacts. © 2008 IEEE.


Publication metadata

Author(s): Wang K, Wilson CJ, Cuthbertson A, Herberholz R, Coulson HP, O'Neill AG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: IEEE International Reliability Physics Symposium Proceedings

Year of Conference: 2008

Pages: 677-678

Date deposited: 16/03/2010

Publisher: IEEE

URL: http://dx.doi.org/10.1109/RELPHY.2008.4558984

DOI: 10.1109/RELPHY.2008.4558984

Library holdings: Search Newcastle University Library for this item

ISBN: 9781424420490


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