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Energy-band alignment of HfO₂/SiO₂/SiC gate dielectric stack

Lookup NU author(s): Dr Rajat Mahapatra, Dr Alton Horsfall, Professor Nick Wright

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Abstract

The band alignment of Hf O2 Si O2 SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the Hf O2 SiC band offset while the larger one of 2.2 eV is due to the interfacial Si O2 SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for Hf O2 on SiC without interfacial Si O2. Thus, presence of an interfacial Si O2 layer increases band offsets to reduce the leakage current characteristics. © 2008 American Institute of Physics.

Publication metadata

Author(s): Mahapatra R, Chakraborty AK, Horsfall AB, Wright NG, Beamson G, Coleman KS

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2008

Volume: 92

Issue: 4

Print publication date: 01/01/2008

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2839314

DOI: 10.1063/1.2839314

Notes: Article no. 042904 3 pages

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