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Lookup NU author(s): Dr Rajat Mahapatra,
Dr Alton Horsfall,
Professor Nick Wright
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The band alignment of Hf O2 Si O2 SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the Hf O2 SiC band offset while the larger one of 2.2 eV is due to the interfacial Si O2 SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for Hf O2 on SiC without interfacial Si O2. Thus, presence of an interfacial Si O2 layer increases band offsets to reduce the leakage current characteristics. © 2008 American Institute of Physics.
Author(s): Mahapatra R, Chakraborty AK, Horsfall AB, Wright NG, Beamson G, Coleman KS
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Print publication date: 01/01/2008
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
Notes: Article no. 042904
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