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The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

Lookup NU author(s): Bing Miao, Dr Rajat Mahapatra, Professor Nick Wright, Dr Alton Horsfall


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The effect of carbon contamination on the electrical properties of metal-insulator-metal (MIM) capacitor using HfO2 dielectric has been reported. The HfO2 film with lower carbon contamination shows an overall high performance, such as a higher capacitance density of 5.21 fF/μ m2, a lower leakage current of 1.3× 10-7 A/ cm2 at 1 V, lower-voltage coefficients of capacitance, and better frequency and temperature dispersion properties compared with the capacitor of the HfO2 film with higher carbon contamination. The calculated ac barrier heights by electrode polarization model from capacitance-voltage (C-V) characteristics are 0.58 eV for the HfO2 film with high carbon contamination and 0.95 eV for the HfO2 film with negligible carbon contamination. The dc barrier heights extracted from current-voltage (I-V) characteristics are 0.26 eV for the HfO2 film with high carbon contamination and 1.1 eV for the HfO2 film with negligible carbon contamination. All of these experimental results exhibit that the increase in defect density in HfO2 films generated from carbon impurities results in the degradation of barrier heights and poor performance of the MIM capacitor. It is important to point out that, during the fabrication process of the MIM capacitor, the carbon contamination must be minimized. © 2008 American Institute of Physics.

Publication metadata

Author(s): Miao B, Mahapatra R, Wright N, Horsfall A

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2008

Volume: 104

Issue: 5

Print publication date: 01/01/2008

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics


DOI: 10.1063/1.2973687

Notes: Article no. 054510 8 pages


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