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Lookup NU author(s): Dr Sarah Olsen
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We report on low frequency noise and field-effect mobility in strained-Si surface n -channel metal-oxide-semiconductor field-effect transistors (MOSFETs) grown on relaxed virtual substrates with a Ge concentration varying between 0% and 30%. An increased Ge concentration results in higher intrinsic field-effect mobility, increasing from 380 cm2 V-1 s-1 for the unstrained channel to 865 cm2 V-1 s-1 for the strained-Si MOSFET on 30% relaxed SiGe virtual substrate. However, the higher mobility is traded off for increased substrate leakage currents and increased 1f (flicker) noise. It is suggested that flicker noise is due to traps in the oxide layer. The density of traps increases from 2× 1017 eV-1 cm-3 for 0% Ge to 2.3× 1018 eV-1 cm-3 for the 30% Ge virtual substrate. © 2008 American Institute of Physics.
Author(s): Fobelets K, Rumyantsev SL, Shur MS, Olsen SH
Publication type: Article
Publication status: Published
Journal: Journal of Applied Physics
Year: 2008
Volume: 103
Issue: 4
Print publication date: 01/01/2008
ISSN (print): 0021-8979
ISSN (electronic): 1520-8850
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.2844553
DOI: 10.1063/1.2844553
Notes: Article no. 044501 4 pages
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