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Mechanistic model for oxidation of SiC

Lookup NU author(s): Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

A mechanistic model for the oxidation of SiC is presented. The model explains the observed anisotropic oxidation rate of SIC in terms of the effect of weakening/strengthening of SI-C bonds arising from the on-going incorporation of highly electronegative oxygen atoms into the crystal lattice. A novel Monte Carlo based oxidation simulator, OXYSIM, is presented and used to explore the proposed SiC oxidation model. The extraction of key process metrics (such as oxide thickness, interface roughness and oxide defect density) is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.


Publication metadata

Author(s): O'Neill AG; Johnson CM; Wright NG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98)

Year of Conference: 1999

Pages: 468-471

ISSN: 2161-6221

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-5107(98)00557-1

DOI: 10.1016/S0921-5107(98)00557-1

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science and Engineering B - Solid State Materials for Advanced Technology

ISBN:


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