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Lookup NU author(s): Kazuhiro Adachi, Dr Christopher Johnson
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In this paper super-junction structures (SJS), which realise very low on-resistance, R-on, for a given breakdown voltage, V-br, are studied and comparisons made between 4H-SiC and Si. Simplified expressions are derived which describe the electric field distribution in the SJS under conditions where a charge imbalance exists in the drift region. These expressions are employed in determining the structure parameters which minimise the on-resistance of the SJS for a given breakdown voltage. The results show that SiC has more than 140 times lower Ran and smaller effects of pillar charge imbalance than Si, for the same V-br. In addition, the design margin for the pillar doping is defined and derived. It is shown that SiC has a 3.3 times higher margin than Si and it is concluded that the SJS is well suited to wide-bad-gap semiconductor materials.
Author(s): Adachi K, Johnson CM, Ohashi H, Shinohe T, Kinoshita K, Arai K
Publication type: Article
Publication status: Published
Journal: Materials Science Forum: Silicon Carbide and Related Materials 2000
Year: 2000
Volume: 353-3
Pages: 719-722
ISSN (print): 0255-5476
ISSN (electronic):
Publisher: Trans Tech Publications
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.719
DOI: 10.4028/www.scientific.net/MSF.353-356.719
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