Browse by author
Lookup NU author(s): Stephen Badcock,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a differential pair. At the specified power of 1.25 mW the input range of the SiGe differential pair at which the percent nonlinearity is below 1%, is roughly twice that of its Si counterpart. Additionally the SiGe circuit is more power efficient since an increase of the power consumption from 1 mW to 1.25 mW accounts for an improvement of about 40% in its input range, as compared to only 10% for Si. (13 References).
Author(s): Badcock SG; O'Neill AG; Michelakis K; Despotopoulos S; Papavassiliou C; Toumazou C
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: IEEE International Symposium on Circuits and Systems
Year of Conference: 2001
Library holdings: Search Newcastle University Library for this item