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Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Dr Alton Horsfall, Dr Christopher Johnson, Professor Nick Wright


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The effectiveness of Boron implanted guard ring (GR) edge termination for SiC Schottky diodes was investigated. Boron implants of energies up to 350 keV (total dose of 7.1(.)10(14)cm(-2)) and up to 200 keV (2.4(.)10(14)cm(-2)) were used to form a box doping profile in GR for the depth of 700 and 400 nm, respectively. The influence of doping level on GR performance was investigated through the use of post implantation annealing under different conditions to vary the Boron activation rate, and reactive ion etching (RIE) to reduce the total surface charge in GR. Fabricated 4H-SiC Schottky diodes revealed soft recoverable avalanche breakdown at voltage of about 1300 V which is 70% of ideal breakdown voltage value.

Publication metadata

Author(s): Vassilevski K, Horsfall AB, Johnson CM, Wright NG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)

Year of Conference: 2004

Pages: 989-992

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: 10.4028/

DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item