On the modeling of transient diffusion and activation of boron during post-implantation annealing

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Author(s): Pichler P, Ortiz CJ, Colombeau B, Cowern NEB, Lampin E, Claverie A, Cristiano F, Lerch W, Paul S

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Electron Device Meeting (invited paper)

Year of Conference: 2004

Pages: 967-970

Publisher: IEEE

URL: http://dx.doi.org/10.1109/IEDM.2004.1419347

DOI: 10.1109/IEDM.2004.1419347

Library holdings: Search Newcastle University Library for this item

ISBN: 0780386841

ePrints