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Lookup NU author(s): Professor Nick Wright, Nipapan Poolamai, Dr Konstantin VasilevskiyORCiD, Dr Alton Horsfall, Dr Christopher Johnson
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The use of high-k dielectrics in 4H-SiC devices has recently attracted interest from the point of view of investigating whether such materials offer enhanced channel conduction when incorporated into 4H-SiC MOSFETS. This study shows that there are benefits and disadvantages of high-k dielectrics beyond just possible enhancement of channel carrier mobility. It is shown that incorporation of high-k dielectrics causes the peak electric field in the forward blocking state to be inside the semiconductor as opposed to the gate oxide of a conventional device. It is also shown that high-k devices are limited by reasons of constraints on cell geometry optimisation to voltages about similar to3kV and that parasitic capacitances within the high-k device are more sensitive to cell layout than in conventional oxide devices.
Author(s): Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)
Year of Conference: 2004
Pages: 1433-1436
ISSN: 0255-5476
Publisher: Materials Science Forum: Trans Tech Publications Ltd
URL: http://dx.doi.org/ 10.4028/www.scientific.net/MSF.457-460.1433
DOI: 10.4028/www.scientific.net/MSF.457-460.1433
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