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Benefits of high-k dielectrics in 4H-SIC trench MOSFETs

Lookup NU author(s): Professor Nick Wright, Nipapan Poolamai, Dr Konstantin VasilevskiyORCiD, Dr Alton Horsfall, Dr Christopher Johnson


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The use of high-k dielectrics in 4H-SiC devices has recently attracted interest from the point of view of investigating whether such materials offer enhanced channel conduction when incorporated into 4H-SiC MOSFETS. This study shows that there are benefits and disadvantages of high-k dielectrics beyond just possible enhancement of channel carrier mobility. It is shown that incorporation of high-k dielectrics causes the peak electric field in the forward blocking state to be inside the semiconductor as opposed to the gate oxide of a conventional device. It is also shown that high-k devices are limited by reasons of constraints on cell geometry optimisation to voltages about similar to3kV and that parasitic capacitances within the high-k device are more sensitive to cell layout than in conventional oxide devices.

Publication metadata

Author(s): Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)

Year of Conference: 2004

Pages: 1433-1436

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: 10.4028/

DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item