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Optimisation of heterostructure bipolar transistors in SiC

Lookup NU author(s): Chia-Ching Chen, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

We present the results of a simulation study on the behaviour of 3C-SiC bipolar transistors fabricated using a 6H-SiC heterojunction emitter. We show that despite the potential barrier originating in the discontinuity of the conduction bands, that npn devices offer a higher common emitter gain in comparison to pnp devices. The base voltage corresponding to the maximum gain of the device is controlled by the tunnelling of carriers across the collector-base junction and is different for both npn and pnp devices.


Publication metadata

Author(s): Chen CC, Horsfall AB, Wright NG, O'Neill AG

Editor(s): Nipoti, R>, Poggi, A., Scorzoni, A.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2005

Pages: 913-916

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9780878499632


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