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Lookup NU author(s): Chia-Ching Chen, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill
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We present the results of a simulation study on the behaviour of 3C-SiC bipolar transistors fabricated using a 6H-SiC heterojunction emitter. We show that despite the potential barrier originating in the discontinuity of the conduction bands, that npn devices offer a higher common emitter gain in comparison to pnp devices. The base voltage corresponding to the maximum gain of the device is controlled by the tunnelling of carriers across the collector-base junction and is different for both npn and pnp devices.
Author(s): Chen CC, Horsfall AB, Wright NG, O'Neill AG
Editor(s): Nipoti, R>, Poggi, A., Scorzoni, A.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2005
Pages: 913-916
ISSN: 0255-5476 (print) 1422-6375 (online)
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum
ISBN: 9780878499632
