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Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

Lookup NU author(s): Professor Nick Cowern

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Author(s): Hamilton JJ, Collart EJH, Colombeau B, Bersani M, Giubertoni D, Kah M, Cowern NEB, Kirkby KJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Symposium C, Materials Research Society Spring Meeting

Year of Conference: 2006

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