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Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

Lookup NU author(s): Dominique Morrison, Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill


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The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.

Publication metadata

Author(s): Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM)

Year of Conference: 1999

Pages: 345-348

ISSN: 0921-5107

Publisher: Elsevier SA


DOI: 10.1016/S0921-5107(98)00531-5

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science and Engineering B: Advanced Functional Solid-state Materials

ISBN: 18734944