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Lookup NU author(s): Dominique Morrison, Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill
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The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.
Author(s): Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM)
Year of Conference: 1999
Pages: 345-348
ISSN: 0921-5107
Publisher: Elsevier SA
URL: http://dx.doi.org/10.1016/S0921-5107(98)00531-5
DOI: 10.1016/S0921-5107(98)00531-5
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science and Engineering B: Advanced Functional Solid-state Materials
ISBN: 18734944
