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Lookup NU author(s): Stephen Badcock,
Professor Anthony O'Neill
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Five vertical architecture options fur SiGe/Si heterojunction CMOS devices are compared using technology computer-aided design. The benefit of using SiGe over conventional MOSFETs is set to increase for future technology generations. We investigate the impact of material degradation, to determine the minimum requirements needed for HMOS to offer real advantages over conventional CMOS. (C) 2000 Academic Press.
Author(s): Badcock S, O'Neill A
Publication type: Article
Publication status: Published
Journal: Superlattices and Microstructures
ISSN (print): 0749-6036
ISSN (electronic): 1096-3677
Publisher: Academic Press
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