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Lookup NU author(s): Dr Suresh Uppal,
Dr Jun Zhang
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The accurate process modeling of impurity diffusion in SiGe relies on correct diffusivity data and understanding of the diffusion mechanisms. In this work, we demonstrate the use of an RTA defect injection technique to elucidate the diffusion mechanisms of Sb, As and B in SiGe, and measure inert diffusivities for 10% Ge. In addition, the technique is used to study the suppression of B diffusion by addition of C to Si and SiGe. Diffusivity is found to be enhanced in 10% SiGe compared to Si for Sb and As, while the diffusion of B is retarded. The addition of C further reduces B diffusion. Diffusion of Sb in SiGe is confirmed to be primarily vacancy mediated, but with f v(SiGe) less than or equal fv(Si). Diffusion of B in SiGe is confirmed to be primarily interstitial mediated. By contrast, diffusion of As in Si and SiGe is demonstrated to be mediated by both interstitials and vacancies.
Author(s): Bonar JM, Karunaratne MSA, Uppal S, Zhang J, Ashburn P, Willoughby AFW
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Electrochemical Society Proceedings: Proceedings of the First Symposium on SiGe: Materials, Processing, and Devices
Year of Conference: 2004
Publisher: Electrochemical Society, Inc.
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