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Lookup NU author(s): Dr Suresh Uppal
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Simulation results for the design and fabrication of an electrically driven solid state modulator are presented. The design criteria has identiped various trade-offs in the manufacturing of an electrically driven modulator using a p-i-n diode to be made from high purity Ge. The issues relating to the doping, layer thickness and contact material for the diode fabrication are discussed. A compromise between the high 'ON' state transmission and uniformity is required to achieve the optimum performance from the device. Using FEMLAB and ATLAS a p-i-n diode with different apertures has been simulated which clearly show the effects of non-uniformity and the requirement of a mesh-type electrode for a uniform absorption across the large device apertures.
Author(s): Uppal S, Rutt HN
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2nd EMRS DTC Technical Conference
Year of Conference: 2005
