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An electrically driven mid-infrared solid-state modulator

Lookup NU author(s): Dr Suresh Uppal

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Abstract

Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14μm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance. Preliminary experimental results will be presented.Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14μm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance. Preliminary experimental results will be presented.

Publication metadata

Author(s): Uppal S, Rutt HN

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Teraherts Electronics (IRMMW-THz)

Year of Conference: 2005

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