Lookup NU author(s): Professor Anthony O'Neill
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Effective negative capacitance has been postulated in ferroelectrics because there is hysteresis in plots of polarization-electric field. In future integrated circuits, the incorporation of negative capacitance into MOSFET gate stacks would reduce the sub-threshold slope, enabling low power operation and reduced self-heating. As a step towards meeting this challenge, effective negative capacitance is demonstrated at room temperature in metal-insulator-metal capacitors, where it is stabilized by the presence of a paraelectric material.
Author(s): O'Neill AG
Publication type: Article
Journal: ECS Transactions
Online publication date: 14/09/2015
Acceptance date: 14/09/2015
Print publication date: 14/09/2015
ISSN (print): 1938-5862
ISSN (electronic): 1938-6737
Publisher: Electrochemical Society, Inc.
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