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(Invited) Negative Capacitance Using Ferroelectrics for Future Steep-Slope MOSFETS

Lookup NU author(s): Professor Anthony O'Neill

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Abstract

Effective negative capacitance has been postulated in ferroelectrics because there is hysteresis in plots of polarization-electric field. In future integrated circuits, the incorporation of negative capacitance into MOSFET gate stacks would reduce the sub-threshold slope, enabling low power operation and reduced self-heating. As a step towards meeting this challenge, effective negative capacitance is demonstrated at room temperature in metal-insulator-metal capacitors, where it is stabilized by the presence of a paraelectric material.


Publication metadata

Author(s): O'Neill AG

Publication type: Article

Journal: ECS Transactions

Year: 2015

Volume: 69

Issue: 10

Pages: 171-177

Online publication date: 14/09/2015

Acceptance date: 14/09/2015

Print publication date: 14/09/2015

ISSN (print): 1938-5862

ISSN (electronic): 1938-6737

Publisher: Electrochemical Society, Inc.

URL: http://dx.doi.org/10.1149/06910.0171ecst

DOI: 10.1149/06910.0171ecst


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