A study of SiGe/Si n-MOSFET processed and unprocessed channel layers using FIB and TEM methods

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Author(s): Chang ACK, Norris DJ, Ross IM, Cullis AG, Olsen SH, O'Neill AG

Editor(s): Cullis, A.G., Hutchison, J.L.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Proceedings of the 14th Conference on Microscopy of Semiconducting Materials (MSM)

Year of Conference: 2005

Pages: 111-114

Publisher: Springer

URL: http://dx.doi.org/10.1007/3-540-31915-8_23

DOI: 10.1007/3-540-31915-8_23

Library holdings: Search Newcastle University Library for this item

Series Title: Springer Proceedings in Physics

ISBN: 9783540319146

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