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Vacancy Engineering for Highly Activated 'Diffusionless' Boron Doping in Bulk Silicon

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern

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Abstract

Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 10(21) cm(-3) can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

Publication metadata

Author(s): Bennett NS, Cowern NEB, Paul S, Lerch W, Kheyrandish H, Smith AJ, Gwilliam R, Seal BJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: ESSDERC 2008: proceedings of the 38th European Solid-State Device Research Conference

Year of Conference: 2008

Pages: 290-293

ISSN: 9781424423637

Publisher: Institute of Electrical and Electronics Engineers

URL: http://dx.doi.org.10.1109/ESSDERC.2008.4681755

DOI: 10.1109/ESSDERC.2008.4681755

Library holdings: Search Newcastle University Library for this item

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