Toggle Main Menu Toggle Search

Open Access padlockePrints

Browsing publications by Dr Nick Bennett.

Newcastle AuthorsTitleYearFull text
Professor Nick Cowern
Dr Sergei Simdyankin
Dr Jon Goss
Dr Chihak Ahn
Dr Nick Bennett
et al.
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 2015
Professor Nick Cowern
Dr Sergei Simdyankin
Dr Chihak Ahn
Dr Nick Bennett
Dr Jon Goss
et al.
Extended point defects in crystalline materials: Ge and Si2013
Dr Nick Bennett
Professor Nick Cowern
Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique2012
Muzhong Shen
Dr Nick Bennett
Emeritus Professor Keith Scott
A concise model for evaluating water electrolysis2011
Dr Nick Bennett
Professor Nick Cowern
Review of electrical characterisation of ultra-shallow junctions with micro four-point probes2010
Dr Nick Bennett
Dr Chihak Ahn
Professor Nick Cowern
Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers2010
Professor Nick Cowern
Dr Nick Bennett
Dr Chihak Ahn
Dr Joo Chul Yoon
Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs2010
Dr Nick Bennett
Professor Nick Cowern
Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon2009
Dr Nick Bennett
Professor Nick Cowern
Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon2009
Professor Nick Cowern
Dr Nick Bennett
Dr Chihak Ahn
Dr Joo Chul Yoon
Overlayer stress effects on defect formation in Si and Ge2009
Dr Nick Bennett
Professor Nick Cowern
Photoacoustic spectroscopy at the nanoscale for ultra-shallow implanted silicon2009
Dr Nick Bennett
Professor Nick Cowern
Raman metrology for advanced CMOS devices - advantages and challenges2009
Dr Nick Bennett
Professor Nick Cowern
Review of electrical characterisation of ultra-shallow junctions with micro four-point probe2009
Dr Chihak Ahn
Dr Nick Bennett
Professor Nick Cowern
Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon2009
Dr Nick Bennett
Dr Chihak Ahn
Professor Nick Cowern
Transient activation model for antimony in relaxed and strained silicon2009
Dr Nick Bennett
Professor Nick Cowern
Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?2008
Dr Nick Bennett
Professor Nick Cowern
Constraints on micro-Raman strain metrology for highly doped strained Si materials2008
Dr Nick Bennett
Professor Nick Cowern
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials2008
Dr Nick Bennett
Professor Nick Cowern
Doping of Sub-50nm SOI Layers2008
Dr Nick Bennett
Professor Nick Cowern
Enhanced n-type dopant solubility in tensile-strained Si2008
Dr Nick Bennett
Professor Nick Cowern
Impact of multiple sub-melt laser scans on the activation and diffusion of shallow boron junctions2008
Dr Nick Bennett
Professor Nick Cowern
On the analysis of the activation mechanisms of sub-melt laser anneals2008
Dr Nick Bennett
Professor Nick Cowern
On the analysis of the activation mechanisms of sub-melt laser anneals2008
Dr Nick Bennett
Professor Nick Cowern
Raman scattering studies of ultrashallow Sb implants in strained Si2008
Dr Nick Bennett
Professor Nick Cowern
Structural and electrical characterisation of ion-implanted strained silicon2008
Dr Nick Bennett
Professor Nick Cowern
Structural and electrical characterisation of ion-implanted strained silicon2008
Professor Nick Cowern
Dr Nick Bennett
Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping2008
Dr Nick Bennett
Professor Nick Cowern
Shona Paul
Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon2008
Dr Nick Bennett
Professor Nick Cowern
Vacancy Engineering for Highly Activated 'Diffusionless' Boron Doping in Bulk Silicon2008
Dr Nick Bennett
Professor Nick Cowern
Antimony for NMOS ultrashallow junctions in strained Si: a superior dopant to arsenic2007
Dr Nick Bennett
Professor Nick Cowern
Enhanced n-type dopant solubility in tensile strained Si2007
Dr Nick Bennett
Professor Nick Cowern
Micro-Raman Study of Anomalous Dopant-Induced Behaviour in Ultra-Shallow As and Sb Doped Strained Si2007
Dr Nick Bennett
Dr Gabriela Dilliway
Professor Nick Cowern
Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon2006
Dr Nick Bennett
Professor Nick Cowern
Highly conductive Sb-doped layers in strained silicon2006
Dr Nick Bennett
Professor Nick Cowern
Strain-Enhanced Activation of Sb Ultrashallow Junctions2006
Dr Nick Bennett
Professor Nick Cowern
Ultra-shallow junctions in silicon via low thermal budget processing2006
Dr Nick Bennett
Professor Nick Cowern
Differential Hall profiling of ultra-shallow junctions in Si and SOI2005
Dr Nick Bennett
Professor Nick Cowern
Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants2005