Newcastle University
Toggle Main Menu
Toggle Search
Home
Browse
Latest
Policies
About
Home
Browse
Latest
Policies
About
ePrints
Browse by author
Browsing publications by
Dr Nick Bennett.
Newcastle Authors
Title
Year
Full text
Professor Nick Cowern
Dr Sergei Simdyankin
Professor Jon Goss
Dr Chihak Ahn
Dr Nick Bennett
et al.
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)]
2015
Professor Nick Cowern
Dr Sergei Simdyankin
Dr Chihak Ahn
Dr Nick Bennett
Professor Jon Goss
et al.
Extended point defects in crystalline materials: Ge and Si
2013
Dr Nick Bennett
Professor Nick Cowern
Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique
2012
Muzhong Shen
Dr Nick Bennett
Emeritus Professor Keith Scott
A concise model for evaluating water electrolysis
2011
Dr Nick Bennett
Professor Nick Cowern
Review of electrical characterisation of ultra-shallow junctions with micro four-point probes
2010
Dr Nick Bennett
Dr Chihak Ahn
Professor Nick Cowern
Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers
2010
Professor Nick Cowern
Dr Nick Bennett
Dr Chihak Ahn
Dr Joo Chul Yoon
Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs
2010
Dr Nick Bennett
Professor Nick Cowern
Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon
2009
Dr Nick Bennett
Professor Nick Cowern
Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon
2009
Professor Nick Cowern
Dr Nick Bennett
Dr Chihak Ahn
Dr Joo Chul Yoon
Overlayer stress effects on defect formation in Si and Ge
2009
Dr Nick Bennett
Professor Nick Cowern
Photoacoustic spectroscopy at the nanoscale for ultra-shallow implanted silicon
2009
Dr Nick Bennett
Professor Nick Cowern
Raman metrology for advanced CMOS devices - advantages and challenges
2009
Dr Nick Bennett
Professor Nick Cowern
Review of electrical characterisation of ultra-shallow junctions with micro four-point probe
2009
Dr Chihak Ahn
Dr Nick Bennett
Professor Nick Cowern
Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon
2009
Dr Nick Bennett
Dr Chihak Ahn
Professor Nick Cowern
Transient activation model for antimony in relaxed and strained silicon
2009
Dr Nick Bennett
Professor Nick Cowern
Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
2008
Dr Nick Bennett
Professor Nick Cowern
Constraints on micro-Raman strain metrology for highly doped strained Si materials
2008
Dr Nick Bennett
Professor Nick Cowern
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials
2008
Dr Nick Bennett
Professor Nick Cowern
Doping of Sub-50nm SOI Layers
2008
Dr Nick Bennett
Professor Nick Cowern
Enhanced n-type dopant solubility in tensile-strained Si
2008
Dr Nick Bennett
Professor Nick Cowern
Impact of multiple sub-melt laser scans on the activation and diffusion of shallow boron junctions
2008
Dr Nick Bennett
Professor Nick Cowern
On the analysis of the activation mechanisms of sub-melt laser anneals
2008
Dr Nick Bennett
Professor Nick Cowern
On the analysis of the activation mechanisms of sub-melt laser anneals
2008
Dr Nick Bennett
Professor Nick Cowern
Raman scattering studies of ultrashallow Sb implants in strained Si
2008
Dr Nick Bennett
Professor Nick Cowern
Structural and electrical characterisation of ion-implanted strained silicon
2008
Dr Nick Bennett
Professor Nick Cowern
Structural and electrical characterisation of ion-implanted strained silicon
2008
Professor Nick Cowern
Dr Nick Bennett
Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping
2008
Dr Nick Bennett
Professor Nick Cowern
Shona Paul
Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon
2008
Dr Nick Bennett
Professor Nick Cowern
Vacancy Engineering for Highly Activated 'Diffusionless' Boron Doping in Bulk Silicon
2008
Dr Nick Bennett
Professor Nick Cowern
Antimony for NMOS ultrashallow junctions in strained Si: a superior dopant to arsenic
2007
Dr Nick Bennett
Professor Nick Cowern
Enhanced n-type dopant solubility in tensile strained Si
2007
Dr Nick Bennett
Professor Nick Cowern
Micro-Raman Study of Anomalous Dopant-Induced Behaviour in Ultra-Shallow As and Sb Doped Strained Si
2007
Dr Nick Bennett
Dr Gabriela Dilliway
Professor Nick Cowern
Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon
2006
Dr Nick Bennett
Professor Nick Cowern
Highly conductive Sb-doped layers in strained silicon
2006
Dr Nick Bennett
Professor Nick Cowern
Strain-Enhanced Activation of Sb Ultrashallow Junctions
2006
Dr Nick Bennett
Professor Nick Cowern
Ultra-shallow junctions in silicon via low thermal budget processing
2006
Dr Nick Bennett
Professor Nick Cowern
Differential Hall profiling of ultra-shallow junctions in Si and SOI
2005
Dr Nick Bennett
Professor Nick Cowern
Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants
2005