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Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates

Lookup NU author(s): Dr Stefan Persson, Mouhsine Fjer, Dr Enrique Escobedo-Cousin, Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

Strained Si HBTs have been demonstrated for the first time with a maximum current gain (P) of 3700 using a relaxed Si0.85Ge0.15 virtual substrate, Si0.7Ge0.3 base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (


Publication metadata

Author(s): Persson S, Fjer M, Escobedo-Cousin E, Malm G, Wang YB, Hellstrom PE, Ostling M, Parker EHC, Nash LJ, Majhi P, Olsen SH, O'Neill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: IEEE International Electron Devices Meeting (IEDM)

Year of Conference: 2008

Pages: 1-4

Date deposited: 15/03/2010

ISSN: 9781424423774

Publisher: IEEE

URL: http://dx.doi.org/10.1109/IEDM.2008.4796800

DOI: 10.1109/IEDM.2008.4796800

Library holdings: Search Newcastle University Library for this item

ISBN: 81642284


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