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Optimisation of 4H-SIC MOSFET structures for logic applications

Lookup NU author(s): Dr Alton Horsfall, Peter Tappin, Praneet Bhatnagar, Professor Nick Wright, Dr Konstantin VasilevskiyORCiD, Irina Nikitina


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Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in creating active chemical sensors requires the development of transistors for additional control circuits to operate in these environments. Despite the recent advances in the quality of oxide layers on SiC, the mobility of inversion layers is still low and this will affect the maximum frequency of the operation for these devices. We present simulation results which indicate that a delta channel, in both n-channel and p-channel structures, is suitable for transistors used with these low level signals. By varying the doping levels of the device we have shown that the optimum delta doping for this application is 1.43x10(19) cm(-3) for both n and p channel devices. We then show the effects of high temperatures on the delta FET devices and make comparisons with standard SiC MOSFET devices.

Publication metadata

Author(s): Horsfall AB, Prentice CHA, Tappin P, Bhatnagar P, Wright NG, Vassilevski K, Nikitina IP

Editor(s): RP Devaty, DJ Larkin and SE Saddow

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials 2005 (ICSCRM 2005)

Year of Conference: 2005

Number of Volumes: 2

Pages: 1325-1328

Publisher: Trans Tech Publications


DOI: 10.4028/

Notes: Book title: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Library holdings: Search Newcastle University Library for this item

ISBN: 0878494251