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Review of electrical characterisation of ultra-shallow junctions with micro four-point probes

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern

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Abstract

Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.

Publication metadata

Author(s): Petersen DH, Hansen O, Hansen TM, Boggild P, Lin R, Kjaer D, Nielsen PF, Clarysse T, Vandervorst W, Rosseel E, Bennett NS, Cowern NEB

Publication type: Review

Publication status: Published

Journal: Journal of Vacuum Science & Technology B

Year: 2010

Volume: 28

Issue: 1

Pages: C1C27-C1C33

Print publication date: 01/01/2010

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

URL: http://dx.doi.org/10.1116/1.3224898

DOI: 10.1116/1.3224898

Notes: Part B. Microelectronics and Nanometer Structures

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