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Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright


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Few Layers Graphene (FLG) films were grown on the carbon-terminated surface of 4H-SiC from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on silicon carbide followed by wet processing to remove the nickel suicide. To identify and characterize the fabricated FLG films, micro-Raman scattering spectroscopy, AFM and optical microscopy have been used. The films grown on samples with initially deposited nickel thinner than 20 nm show clear graphene footprints in micro-Raman scattering spectra, namely a single component, Lorentzian shape 2D band with FWHM remarkably lower than that of the 2D peak of graphite.

Publication metadata

Author(s): Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM

Editor(s): Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009)

Year of Conference: 2010

Pages: 589-592

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375