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4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

Lookup NU author(s): Dr Konstantin Vasilevskiy, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Dr Christopher Johnson

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Abstract

4H-SiC diodes with 0.60 mm(2) nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 m Omega xcm(2) and blocking voltages (V-BL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (V-BL)(2)/RON-SP, is equal to 2015 MW/cm(2) and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and V-BL value in excess of 3.3 kV at ambient temperatures up to 200 degrees C.


Publication metadata

Author(s): Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM

Editor(s): Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009)

Year of Conference: 2010

Pages: 897-900

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.897

DOI: 10.4028/www.scientific.net/MSF.645-648.897

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375


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