4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

Vassilevski, K; Nikitina, IP; Horsfall, AB; Wright, NG; Johnson, CM

doi:10.4028/www.scientific.net/MSF.645-648.897

4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

Lookup NU author(s): Dr Konstantin Vasilevskiy ORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Dr Christopher Johnson

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Abstract

4H-SiC diodes with 0.60 mm(2) nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 m Omega xcm(2) and blocking voltages (V-BL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (V-BL)(2)/RON-SP, is equal to 2015 MW/cm(2) and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and V-BL value in excess of 3.3 kV at ambient temperatures up to 200 degrees C.