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Impact ionization in ion implanted 4H-SiC photodiodes

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Professor Nick Wright, Dr Christopher Johnson


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Hole dominated avalanche multiplication and thus breakdown characteristics of ion implanted 4H-SiC p+-n--n+ photodiodes were determined by means of photomultiplication measurements using 325 nm UV light. All the tested diodes exhibited low reverse leakage current and reasonably uniform avalanche breakdown. With avalanche widths of 0.2 μm to 1.5 μm and the capability to measure multiplication factor as low as 1.001, the room temperature impact ionization coefficients were precisely deduced from these 4H-SiC diodes using a local ionization model for electric fields ranging from 1.25 MV/cm to 2.8 MV/cm. The results agree with those reported by Ng et al. and are within the accuracy of both the C-V measurements and electric-field determinations. © 2008 Materials Research Society.

Publication metadata

Author(s): Loh WS, Goh EZJ, Vassilevski K, Nikitina I, David JPR, Wright NG, Johnson CM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium Proceedings: Silicon Carbide - Materials, Processing and Devices

Year of Conference: 2008

Pages: 245-250

ISSN: 0272-9172

Publisher: Materials Research Society

Library holdings: Search Newcastle University Library for this item

ISBN: 9781605110394