Silicon carbide vertical JFET operating at high temperature

Vassilevski, K; Hilton, KP; Wright, N; Uren, M; Munday, A; Nikitina, I; Hydes, A; Horsfall, A; Johnson, CM

doi:10.4028/www.scientific.net/MSF.600-603.1063

Silicon carbide vertical JFET operating at high temperature

Lookup NU author(s): Dr Konstantin Vasilevskiy ORCiD, Professor Nick Wright, Irina Nikitina, Dr Alton Horsfall, Dr Christopher Johnson

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Abstract

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p +-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 mΩ.cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 °C followed a power law (∼ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC. © (2009) Trans Tech Publications, Switzerland.