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Lookup NU author(s): Dr Konstantin Vasilevskiy,
Professor Nick Wright,
Dr Alton Horsfall,
Dr Christopher Johnson
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Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p +-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 mΩ.cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 °C followed a power law (∼ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC. © (2009) Trans Tech Publications, Switzerland.
Author(s): Vassilevski K, Hilton KP, Wright N, Uren M, Munday A, Nikitina I, Hydes A, Horsfall A, Johnson CM
Editor(s): Suzuki, A., Okumura, H., Kimoto, T., Fuyuki, T., Fukuda, K., Nishizawa, S.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 12th International Conference on Silicon Carbide and Related Materials (ICSCRM 2007)
Year of Conference: 2009
Publisher: Materials Science Forum: Trans Tech Publications Ltd
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