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Silicon carbide vertical JFET operating at high temperature

Lookup NU author(s): Dr Konstantin Vasilevskiy, Professor Nick Wright, Irina Nikitina, Dr Alton Horsfall, Dr Christopher Johnson

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Abstract

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p +-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 mΩ.cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 °C followed a power law (∼ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC. © (2009) Trans Tech Publications, Switzerland.


Publication metadata

Author(s): Vassilevski K, Hilton KP, Wright N, Uren M, Munday A, Nikitina I, Hydes A, Horsfall A, Johnson CM

Editor(s): Suzuki, A., Okumura, H., Kimoto, T., Fuyuki, T., Fukuda, K., Nishizawa, S.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 12th International Conference on Silicon Carbide and Related Materials (ICSCRM 2007)

Year of Conference: 2009

Pages: 1063-1066

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.1063

DOI: 10.4028/www.scientific.net/MSF.600-603.1063

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375


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