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Impact of interfacial nitridation of HfO2 high-k gate dielectric stack on 4H-SiC

Lookup NU author(s): Dr Rajat Mahapatra, Peter Tappin, Bing Miao, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright


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HfO2 films were grown on SiO2/4H-SiC and SiON/4H-SiC layers by evaporation of metallic Hf in an electron beam deposition system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of HfO2 films. There is no evidence of formation of hafnium silicide or carbon pile up at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer slow traps in the HfO 2SiON gate dielectric stack on 4H-SiC and comparable values of interface state density. The HfO2SiON stack layer improves leakage current characteristics with a higher breakdown field and has better reliability under electrical stress. © 2007 Materials Research Society.

Publication metadata

Author(s): Mahapatra R, Chakraborty A, Tappin P, Miao B, Horsfall A, Chattopadhyay S, Wright N, Coleman K

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium Proceedings: Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies (MRS Spring Meeting)

Year of Conference: 2007

Pages: 163-168

Library holdings: Search Newcastle University Library for this item

ISBN: 9781605604282