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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD,
Professor Nick Wright
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Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AlN single crystals with a thickness up to 400 μm and low dislocation density. © (2010) Trans Tech Publications.
Author(s): Yazdi G, Vassilevski K, Córdoba J, Gogova D, Nikitina I, Syväjärvi M, Odén M, Wright N, Yakimova R
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science Forum: Silicon Carbide and Related Materials 2009
Year of Conference: 2010
ISSN: 0255-5476 (print) 1422-6375 (online)
Publisher: Trans Tech Publications Ltd.
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