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Lookup NU author(s): Dr Konstantin Vasilevskiy,
Dr Alton Horsfall,
Professor Nick Wright,
Dr Christopher Johnson
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4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩ×cm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figureof- merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm 2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient temperatures up to 200°C. © (2010) Trans Tech Publications, Switzerland.
Author(s): Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C
Editor(s): Bauer, A.J., Friedrichs, P., Krieger, M., Pensl, G., Rupp, R., Seyller, T.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science Forum: Silicon Carbide and Related Materials
Year of Conference: 2010
Publisher: Trans Tech Publications Ltd.
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