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3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

Lookup NU author(s): Dr Konstantin Vasilevskiy, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Dr Christopher Johnson

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Abstract

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 mu m thick blocking layer with donor concentration of 2.2x10(15) cm(-3). The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 degrees C.


Publication metadata

Author(s): Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Johnson CM

Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2011

Pages: 555-558

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.555

DOI: 10.4028/www.scientific.net/MSF.679-680.555

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