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Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern


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In this coming decade, complementary metal-oxide-semiconductor microelectronic devices may undergo a major change with the implementation of germanium channels. Likewise, the performance of photovoltaic cells based on elemental semiconductors will continue to be optimized. Both technologies will rely on a detailed and thorough understanding of electrical properties, and here, precise doping characterization will play a key role. The differential Hall technique combines resistivity and Hall-effect measurements with successive surface layer removal, allowing one to measure independent carrier concentration and mobility depth profiles. In this Letter, we apply the technique for both microelectronic- and photovoltaic-relevant doping structures in germanium. Controllable and uniform layer removal is achieved with tailored depth resolution (<1-20 nm) for a range of doping structures (30-600 nm). (C) 2012 American Institute of Physics. []

Publication metadata

Author(s): Bennett NS, Cowern NEB

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2012

Volume: 100

Issue: 17

Print publication date: 24/04/2012

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics


DOI: 10.1063/1.4705293


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