ePrints

Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

In this coming decade, complementary metal-oxide-semiconductor microelectronic devices may undergo a major change with the implementation of germanium channels. Likewise, the performance of photovoltaic cells based on elemental semiconductors will continue to be optimized. Both technologies will rely on a detailed and thorough understanding of electrical properties, and here, precise doping characterization will play a key role. The differential Hall technique combines resistivity and Hall-effect measurements with successive surface layer removal, allowing one to measure independent carrier concentration and mobility depth profiles. In this Letter, we apply the technique for both microelectronic- and photovoltaic-relevant doping structures in germanium. Controllable and uniform layer removal is achieved with tailored depth resolution (<1-20 nm) for a range of doping structures (30-600 nm). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705293]

Publication metadata

Author(s): Bennett NS, Cowern NEB

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2012

Volume: 100

Issue: 17

Print publication date: 24/04/2012

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.4705293

DOI: 10.1063/1.4705293

Altmetrics

Share