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Top-down fabrication of single crystal silicon nanowire using optical lithography

Lookup NU author(s): Nor Za'bah, Dr Kelvin Kwa, Professor Anthony O'Neill

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Abstract

A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular cross section and are without breakages over lengths of tens of microns. Electrical characterization indicates bulk like mobility values, not strongly influenced by surface scattering or quantum confinement. Processing is compatible with conventional silicon technology having much larger critical dimensions. Integrating such nanowires with a mature CMOS technology offers an inexpensive route to their exploitation as sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737463]

Publication metadata

Author(s): Za'bah NF, Kwa KSK, Bowen L, Mendis B, O'Neill A

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2012

Volume: 112

Issue: 2

Print publication date: 19/07/2012

Date deposited: 29/07/2014

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.4737463

DOI: 10.1063/1.4737463

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