Browse by author
Lookup NU author(s): Simon Barker,
Dr Konstantin VasilevskiyORCiD,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Recent progress in the field of silicon carbide sensor technology, such as wireless communications and sensors, has demonstrated the need for a resilient energy supply as an alternative to conventional batteries. Previous work has shown that silicon carbide is an effective energy harvester of UV light in high temperature and hostile environments. Until now however, there has been little work undertaken to assess the long-term effects of elevated temperature on such devices. Although it is understood that silicon carbide is unaffected by long-term temperature exposure below 400 degrees C, there has been little research into the overall device response and how changes in contact metallisation affect the photovoltaic behavior.
Author(s): Barker S, Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB
Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)
Year of Conference: 2012
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum