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Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices

Lookup NU author(s): Simon Barker, Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Professor Nick Wright, Dr Alton Horsfall


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Recent progress in the field of silicon carbide sensor technology, such as wireless communications and sensors, has demonstrated the need for a resilient energy supply as an alternative to conventional batteries. Previous work has shown that silicon carbide is an effective energy harvester of UV light in high temperature and hostile environments. Until now however, there has been little work undertaken to assess the long-term effects of elevated temperature on such devices. Although it is understood that silicon carbide is unaffected by long-term temperature exposure below 400 degrees C, there has been little research into the overall device response and how changes in contact metallisation affect the photovoltaic behavior.

Publication metadata

Author(s): Barker S, Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB

Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)

Year of Conference: 2012

Pages: 997-1000

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783037854198