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Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

Lookup NU author(s): Dr Toby Hopf, Dr Konstantin VasilevskiyORCiD, Dr Enrique Escobedo-Cousin, Dr Peter King, Professor Nick Wright, Professor Anthony O'Neill, Dr Alton Horsfall, Professor Jon Goss

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This is the final published version of an article that has been published in its final definitive form by American Institute of Physics, 2014.

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Author(s): Hopf T, Vassilevski KV, Escobedo-Cousin E, King PJ, Wright NG, O'Neill AG, Horsfall AB, Goss JP, Wells GH, Hunt MRC

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2014

Volume: 116

Issue: 15

Print publication date: 21/10/2014

Online publication date: 17/10/2014

Acceptance date: 06/10/2014

Date deposited: 20/10/2014

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.4898562

DOI: 10.1063/1.4898562

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