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Lookup NU author(s): Professor Nick Cowern,
Dr Sergei Simdyankin,
Professor Jon Goss,
Dr Chihak Ahn,
Dr Nick Bennett
This is the final published version of an article that has been published in its final definitive form by American Institute of Physics, 2015.
For re-use rights please refer to the publisher's terms and conditions.
The authors of the above paper call into question recent evidence on the properties of self-interstitials, I, in Ge [Phys. Rev. Lett. 110, 155501 (2013)]. We show that this judgment stems from invalid model assumptions during analysis of data on B marker-layer diffusion during proton irradiation, and that a corrected analysis fully supports the reported evidence. As previously stated, I-mediated self-diffusion in Ge exhibits two distinct regimes of temperature, T: high-T, dominated by amorphous-like mono-interstitial clusters – i-morphs – with self-diffusion entropy ≈ 30 k, and low-T, where transport is dominated by simple self-interstitials. In a transitional range centered on 475°C both mechanisms contribute. The experimental I migration energy of (1.84 ± 0.26) eV reported by the Münster group based on measurements of self-diffusion during irradiation at 550°C < T < 680°C further establishes our proposed i-morph mechanism.
Author(s): Cowern NEB, Simdyankin S, Goss JP, Napolitani E, DeSalvador D, Bruno E, Mirabella S, Ahn C, Bennett NS
Publication type: Article
Publication status: Published
Journal: Applied Physics Reviews
Online publication date: 02/09/2015
Acceptance date: 26/06/2015
Date deposited: 01/07/2015
ISSN (electronic): 1931-9401
Publisher: American Institute of Physics
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