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Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)]

Lookup NU author(s): Professor Nick Cowern, Dr Sergei Simdyankin, Professor Jon Goss, Dr Chihak Ahn, Dr Nick Bennett



This is the final published version of an article that has been published in its final definitive form by American Institute of Physics, 2015.

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The authors of the above paper call into question recent evidence on the properties of self-interstitials, I, in Ge [Phys. Rev. Lett. 110, 155501 (2013)]. We show that this judgment stems from invalid model assumptions during analysis of data on B marker-layer diffusion during proton irradiation, and that a corrected analysis fully supports the reported evidence. As previously stated, I-mediated self-diffusion in Ge exhibits two distinct regimes of temperature, T: high-T, dominated by amorphous-like mono-interstitial clusters – i-morphs – with self-diffusion entropy ≈ 30 k, and low-T, where transport is dominated by simple self-interstitials. In a transitional range centered on 475°C both mechanisms contribute. The experimental I migration energy of (1.84 ± 0.26) eV reported by the Münster group based on measurements of self-diffusion during irradiation at 550°C < T < 680°C further establishes our proposed i-morph mechanism.

Publication metadata

Author(s): Cowern NEB, Simdyankin S, Goss JP, Napolitani E, DeSalvador D, Bruno E, Mirabella S, Ahn C, Bennett NS

Publication type: Article

Publication status: Published

Journal: Applied Physics Reviews

Year: 2015

Volume: 2

Online publication date: 02/09/2015

Acceptance date: 26/06/2015

Date deposited: 01/07/2015

ISSN (electronic): 1931-9401

Publisher: American Institute of Physics


DOI: 10.1063/1.4929762


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