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Lookup NU author(s): Dr Jesus Urresti IbanezORCiD, Dr Sarah Olsen, Professor Nick Wright, Professor Anthony O'Neill
This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2019.
For re-use rights please refer to the publisher's terms and conditions.
High-performance 4H-SiC MOSFETs have been fabricated, having a peak effective mobility of 265 cm2/V · s, and a peak field effect mobility of 154 cm2/V s, in 2-μmgate lengthMOSFETs. The gate-stackwas designed to minimize interface states and comprised a 0.7-nm thermally grown SiO2 on 4H-SiC, followed by Al2O3 and a metal gate contact. In this way, carbon remaining following SiC oxidation is significantly reduced. A density of interface traps in the range of 6 × 1011–5 × 1010cm−2eV−1 is also obtained. Temperature-dependentelectrical data reveal that the high mobility results from conduction being phononlimited, rather than Coulomb-limited. Furthermore, universal mobility in these 4H-SiC MOSFETs is shown to be up to 50% of that observed in the Si devices. Expressions for electric field-dependent contributions to mobility are presented. A steep subthreshold slope of 127 mV/decade indicates low electrical defect density. A temperature coefficient of −4.6 mV/K in threshold voltage is similar to that in the Si MOSFETs.
Author(s): Urresti J, Arith F, Olsen S, Wright N, ONeill A
Publication type: Article
Publication status: Published
Journal: Transactions on Electron Devices
Year: 2019
Volume: 66
Issue: 4
Pages: 1710-1716
Print publication date: 01/04/2019
Online publication date: 06/03/2019
Acceptance date: 20/02/2019
Date deposited: 12/03/2019
ISSN (print): 0018-9383
ISSN (electronic): 1557-9646
Publisher: IEEE
URL: http://doi.org/10.1109/TED.2019.2901310
DOI: 10.1109/TED.2019.2901310
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