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Diffusion of boron in germanium at 800–900°C

Lookup NU author(s): Dr Suresh Uppal, Professor Nick Cowern

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Abstract

Diffusion of B in Ge is studied in the temperature range 800–900 °C using implantation doping and B doped epitaxial Ge layers. Concentration profiles before and after furnace annealing were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients were calculated by fitting the annealed profiles using TSUPREM. We obtained diffusivity values which are at least two orders of magnitude lower than the lowest values previously reported in the literature. Using our values an activation energy of 4.65(±0.3) eV is calculated. Present experimental results suggest that interstitial mediated mechanism should be considered for B diffusion in Ge in accordance with recent theoretical calculations. Annealed SIMS profiles also suggest that B solid solubility in Ge is ~2×1018 cm–3 at 875 °C which agrees with literature values.

Publication metadata

Author(s): Uppal S, Willoughby AFW, Bonar JM, Cowern NEB, Grasby T, Morris RJH, Dowsett MG

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2004

Volume: 96

Issue: 3

Pages: 1376-1380

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1766090

DOI: 10.1063/1.1766090

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