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Lookup NU author(s): Dr Suresh Uppal, Professor Nick Cowern
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Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10−16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.
Author(s): Cowern NEB; Uppal S; Willoughby AFW; Bonar JM; Evans AGR; Morris R; Dowsett MG
Publication type: Article
Publication status: Published
Journal: Physica B: Condensed Matter
Year: 2001
Volume: 308-310
Pages: 525-528
ISSN (print): 0921-4526
ISSN (electronic): 1873-2135
Publisher: Elsevier BV
URL: http://dx.doi.org/10.1016/S0921-4526(01)00752-9
DOI: 10.1016/S0921-4526(01)00752-9
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