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Ion-implantation and diffusion behaviour of boron in germanium

Lookup NU author(s): Dr Suresh Uppal, Professor Nick Cowern


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Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10−16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.

Publication metadata

Author(s): Cowern NEB; Uppal S; Willoughby AFW; Bonar JM; Evans AGR; Morris R; Dowsett MG

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 2001

Volume: 308-310

Pages: 525-528

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier BV


DOI: 10.1016/S0921-4526(01)00752-9


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