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The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes

Lookup NU author(s): Dominique Morrison, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Sylvie Ortolland

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Abstract

The edge termination of SiC by the implantation of an inert ion species is used widely to increase the breakdown voltage of high power devices. We report results of the edge termination of Schottky barrier diodes using 30keV Ar+ ions with particular emphasis on the role of post-implant, relatively low temperature, annealing. The device leakage current measured at 100V is increased from 2.5nA to 7μA by the implantation of 30keV Ar+ ions at a dose of 1×1015cm-2. This is reduced by two orders of magnitude following annealing at 600°C for 60 seconds, while a breakdown voltage in excess of 750V is maintained. The thermal evolution of the defects introduced by the implantation was monitored using positron annihilation spectroscopy (PAS) and deep-level-transient spectroscopy (DLTS). While a concentration of open-volume defects in excess of 1×1019cm-3 is measured using PAS in all samples, electrically active trapping sites are observed at concentrations ∼1×1015cm-3 using DLTS. The trap level is well-defined at Ec-Et = 0.9eV.


Publication metadata

Author(s): Knights AP, Morrison DJ, Wright NG, Johnson CM, O'Neill AG, Ortolland S, Homewood KP, Lourenco MA, Gwilliam RM, Coleman PG

Publication type: Article

Publication status: Published

Journal: Materials Research Society Symposium - Proceedings

Year: 1999

Volume: 572

Pages: 129-134

Print publication date: 01/01/1999

ISSN (print): 0272-9172

ISSN (electronic):

Publisher: Materials Research Society

URL: http://dx.doi.org/10.1557/PROC-572-129

DOI: 10.1557/PROC-572-129


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