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Lookup NU author(s): Dominique Morrison, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Sylvie Ortolland
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The edge termination of SiC by the implantation of an inert ion species is used widely to increase the breakdown voltage of high power devices. We report results of the edge termination of Schottky barrier diodes using 30keV Ar+ ions with particular emphasis on the role of post-implant, relatively low temperature, annealing. The device leakage current measured at 100V is increased from 2.5nA to 7μA by the implantation of 30keV Ar+ ions at a dose of 1×1015cm-2. This is reduced by two orders of magnitude following annealing at 600°C for 60 seconds, while a breakdown voltage in excess of 750V is maintained. The thermal evolution of the defects introduced by the implantation was monitored using positron annihilation spectroscopy (PAS) and deep-level-transient spectroscopy (DLTS). While a concentration of open-volume defects in excess of 1×1019cm-3 is measured using PAS in all samples, electrically active trapping sites are observed at concentrations ∼1×1015cm-3 using DLTS. The trap level is well-defined at Ec-Et = 0.9eV.
Author(s): Knights AP, Morrison DJ, Wright NG, Johnson CM, O'Neill AG, Ortolland S, Homewood KP, Lourenco MA, Gwilliam RM, Coleman PG
Publication type: Article
Publication status: Published
Journal: Materials Research Society Symposium - Proceedings
Year: 1999
Volume: 572
Pages: 129-134
Print publication date: 01/01/1999
ISSN (print): 0272-9172
ISSN (electronic):
Publisher: Materials Research Society
URL: http://dx.doi.org/10.1557/PROC-572-129
DOI: 10.1557/PROC-572-129
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