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Optimisation of a power 4H-SiC SIT device for RF heating applications

Lookup NU author(s): Dr Sylvie Ortolland, Dr Christopher Johnson, Dominique Morrison, Professor Anthony O'Neill

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Abstract

In this paper, the optimisation procedure for a static induction transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 μm thick epitaxial layer with doping in the range 1015 cm-3 to 1016 cm-3. Results show a breakdown voltage of 1280 V, corresponding to 68% of the theoretical value. For the chosen application an epitaxial layer doping level of 5×1015 cm-3 is revealed to offer the best compromise. This allows pinch off of drain voltages exceeding 600 V from a 20 V gate drive whilst achieving a current density of 250 A cm-2 at an on-state voltage of less than 1 V. Transient simulations are performed for a series load resonant converter with a switching frequency of 27.12 MHz. The results emphasise the suitability of the device for RF heating applications.

Publication metadata

Author(s): Ortolland S, Johnson CM, Wright NG, Morrison DJ, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Materials Science and Engineering B

Year: 1999

Volume: 61-62

Pages: 411-414

Print publication date: 30/07/1999

ISSN (print): 0921-5107

ISSN (electronic):

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-5107(98)00544-3

DOI: 10.1016/S0921-5107(98)00544-3

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