Toggle Main Menu Toggle Search

Open Access padlockePrints

Optimisation of a power 4H-SiC SIT device for RF heating applications

Lookup NU author(s): Dr Sylvie Ortolland, Dr Christopher Johnson, Dominique Morrison, Professor Anthony O'Neill

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

In this paper, the optimisation procedure for a static induction transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 μm thick epitaxial layer with doping in the range 1015 cm-3 to 1016 cm-3. Results show a breakdown voltage of 1280 V, corresponding to 68% of the theoretical value. For the chosen application an epitaxial layer doping level of 5×1015 cm-3 is revealed to offer the best compromise. This allows pinch off of drain voltages exceeding 600 V from a 20 V gate drive whilst achieving a current density of 250 A cm-2 at an on-state voltage of less than 1 V. Transient simulations are performed for a series load resonant converter with a switching frequency of 27.12 MHz. The results emphasise the suitability of the device for RF heating applications.


Publication metadata

Author(s): Ortolland S, Johnson CM, Wright NG, Morrison DJ, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Materials Science and Engineering B

Year: 1999

Volume: 61-62

Pages: 411-414

Print publication date: 30/07/1999

ISSN (print): 0921-5107

ISSN (electronic):

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-5107(98)00544-3

DOI: 10.1016/S0921-5107(98)00544-3


Altmetrics

Altmetrics provided by Altmetric


Actions

Find at Newcastle University icon    Link to this publication


Share