Browse by author
Lookup NU author(s): Dr Sylvie Ortolland,
Dr Christopher Johnson,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
In this paper, the optimisation procedure for a static induction transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 μm thick epitaxial layer with doping in the range 1015 cm-3 to 1016 cm-3. Results show a breakdown voltage of 1280 V, corresponding to 68% of the theoretical value. For the chosen application an epitaxial layer doping level of 5×1015 cm-3 is revealed to offer the best compromise. This allows pinch off of drain voltages exceeding 600 V from a 20 V gate drive whilst achieving a current density of 250 A cm-2 at an on-state voltage of less than 1 V. Transient simulations are performed for a series load resonant converter with a switching frequency of 27.12 MHz. The results emphasise the suitability of the device for RF heating applications.
Author(s): Ortolland S, Johnson CM, Wright NG, Morrison DJ, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Materials Science and Engineering B
Print publication date: 30/07/1999
ISSN (print): 0921-5107
Altmetrics provided by Altmetric