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Low temperature annealing of 4H-SiC Schottky diode edge terminations 4 formed by 30 keV Ar+ implantation

Lookup NU author(s): Dominique Morrison, Professor Nick Wright, Dr Sylvie Ortolland, Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

Edge termination of Schottky barrier diodes has been achieved using 30keV Ar+ ions implanted at a dose of 1 × 1015cm2. The reverse-bias leakage current is reduced by 2 orders of magnitude following postimplant annealing at a temperature of 600 °C. The thermal evolution of the implantation induced defects was monitored using positron annihilation spectroscopy and deep-level transient spectroscopy. Two distinct defect regions are observed using the positron technique. The depth of the first is consistent with the range of the implanted Ar+ ions and consists of clustered vacancies. The second extends to ∼250 nm, well beyond the range of the incident ions, and is dominated by point defects, similar in structure to Si-C divacancies. An implant damage related deep level, well defined at Ec-Et-0.9 eV, is observed for both the as-implanted and the 600 °C annealed sample. The effect of annealing is a reduction in the concentration of active carrier trapping centers. © 2000 American Institute of Physics.


Publication metadata

Author(s): Knights AP, Lourenco MA, Homewood KP, Morrison DJ, Wright NG, Ortolland S, Johnson CM, O'Neill AG, Coleman PG, Hilton KP, Uren MJ

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2000

Volume: 87

Issue: 8

Pages: 3973-3977

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.372443

DOI: 10.1063/1.372443


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