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Lookup NU author(s): Dr Sarah Olsen,
Professor Anthony O'Neill
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The 3D morphology of the gate electrode in a Si-Ge MOSFET device has been determined by 3D FIB tomographic analysis. Sequential 2D FIB sectioning, imaging, and computer reconstruction enables the gate electrode shape and location with respect to the neighbouring source and drain to be determined in 3D. (11 References).
Author(s): Inkson BJ, Olsen S, Norris DJ, O'Neill AG, Mobus G
Editor(s): Cullis, A.G., Midgely, P.A.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Microscopy of Semiconducting Materials Conference
Year of Conference: 2004
Publisher: Institute of Physics
Notes: Cullis AG
Microscopy of Semiconducting Materials Conference. Cambridge, UK. 31 March-3 April 2003.
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Series Title: Institute of Physics Conference Series