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3D determination of a MOSFET gate morphology by FIB tomography

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

The 3D morphology of the gate electrode in a Si-Ge MOSFET device has been determined by 3D FIB tomographic analysis. Sequential 2D FIB sectioning, imaging, and computer reconstruction enables the gate electrode shape and location with respect to the neighbouring source and drain to be determined in 3D. (11 References).

Publication metadata

Author(s): Inkson BJ, Olsen S, Norris DJ, O'Neill AG, Mobus G

Editor(s): Cullis, A.G., Midgely, P.A.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Microscopy of Semiconducting Materials Conference

Year of Conference: 2004

Pages: 611-616

Publisher: Institute of Physics

Notes: Cullis AG Midgley PA Bristol, UK. Microscopy of Semiconducting Materials Conference. Cambridge, UK. 31 March-3 April 2003.

Library holdings: Search Newcastle University Library for this item

Series Title: Institute of Physics Conference Series

ISBN: 9780750309790

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