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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD,
Dr Alton Horsfall,
Dr Christopher Johnson,
Professor Nick Wright,
Professor Anthony O'Neill
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4H-SiC rectifiers with dual metal planar (DMP) Schottky contacts have been fabricated with a main titanium and an annular nickel contact. Fabricated diodes display low reverse leakage currents and low forward barrier heights. The diodes exhibited a high on/off current ratio (at 1 V/ - 500 V) exceeding 5.108.
Author(s): Wright NG; Vassilevski KV; O'Neill AG; Horsfall AB; Johnson CM
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Electron Devices
ISSN (print): 0018-9383
ISSN (electronic): 1557-9646
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