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4H-SiC rectifiers with dual metal planar Schottky contacts

Lookup NU author(s): Dr Konstantin Vasilevskiy, Dr Alton Horsfall, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

4H-SiC rectifiers with dual metal planar (DMP) Schottky contacts have been fabricated with a main titanium and an annular nickel contact. Fabricated diodes display low reverse leakage currents and low forward barrier heights. The diodes exhibited a high on/off current ratio (at 1 V/ - 500 V) exceeding 5.108.


Publication metadata

Author(s): Wright NG; Vassilevski KV; O'Neill AG; Horsfall AB; Johnson CM

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2002

Volume: 49

Issue: 5

Pages: 947-949

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/16.998610

DOI: 10.1109/16.998610


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