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Lookup NU author(s): Dr Konstantin Vasilevskiy,
Dr Alton Horsfall,
Dr Christopher Johnson,
Professor Nick Wright,
Professor Anthony O'Neill
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4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward barrier heights, corresponding to titanium diodes. The diodes exhibit an unrecoverable breakdown at voltages up to 1250 V and a high on/off current ratio (at 1V/-500V) of about 5·108.
Author(s): Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Materials Science Forum
Print publication date: 01/01/2002
ISSN (print): 0255-5476
ISSN (electronic): 1422-6375
Publisher: Trans Tech Publications Ltd.
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