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4H-SiC Schottky diodes with high on/off current ratio

Lookup NU author(s): Dr Konstantin Vasilevskiy, Dr Alton Horsfall, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward barrier heights, corresponding to titanium diodes. The diodes exhibit an unrecoverable breakdown at voltages up to 1250 V and a high on/off current ratio (at 1V/-500V) of about 5ยท108.


Publication metadata

Author(s): Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 2002

Volume: 389-393

Issue: 2

Pages: 1145-1148

Print publication date: 01/01/2002

ISSN (print): 0255-5476

ISSN (electronic): 1422-6375

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.1145

DOI: 10.4028/www.scientific.net/MSF.389-393.1145


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