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Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

Lookup NU author(s): Cezar Blasciuc-Dimitriu, Dr Alton Horsfall, Dr Konstantin Vasilevskiy, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

Three approaches to the modelling of the temperature and voltage dependence of the forward and reverse bias characteristics of 4H-SiC Ti Schottky Diodes are compared. 4H-SiC Schottky barrier diodes (SD) were fabricated and subjected to forward and reverse bias I-V characterisation at temperatures ranging from ambient to 300°C. Device parameters (barrier height, ideality factor) and the Richardson constant - area product (A·A**) were extracted from the forward characteristics using a modified Norde technique. Comparisons were made using extracted parameters for both forward and reverse bias conditions between three models: thermionic emission theory (TE), thermionic emission with barrier lowering (TEBIL) theory and thermionic field emission (TFE) theory. It is found that both TEBIL and TFE can provide a close fit for both forward and reverse conditions from a single set of parameters.


Publication metadata

Author(s): Blasciuc-Dimitriu C, Horsfall AB, Vasilevskiy KV, Johnson CM, Wright NG, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 2003

Volume: 433-436

Pages: 823-826

Print publication date: 01/09/2003

ISSN (print): 0255-5476

ISSN (electronic): 1422-6375

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.823

DOI: 10.4028/www.scientific.net/MSF.433-436.823


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